http://solidot.org.feedsportal.com/c/33236/f/556826/s/2faabe7d/l/0L0Ssolidot0Borg0Cstory0Dsid0F35918/story01.htm
美国创业公司Crossbar声称它解决了阻碍电阻式存储器(resistive RAM,缩写RRAM)商业化的技术障碍。RRAM被认为是下一代存储器,相比现有的NAND Flash存储器有诸多优势:能耗低,体积更小,储存时间更长。Crossbar声称,RRAM储存数据的时间最长可能达到20年,相比下Flash只有三年。RRAM技术可以在很小的芯片上实现1TB存储容量。RRAM是创建电阻储存比特而不是用电荷储存比特。


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